New capabilities of the CMOS inverter

Author

Talkhan, Elsayed A.

Author_Institution

Dept. of Electron. & Commun., Cairo Univ., Giza, Egypt

Volume

23

Issue

3

fYear

1988

fDate

6/1/1988 12:00:00 AM

Firstpage

872

Lastpage

875

Abstract

Capabilities of the CMOS inverter are introduced that are based on the theory that for V_Tn=|V_Tn|≃2/3V _SS, a third high-impedance (HI) valid logic state is created between the zero and one states. By the generation of a `HALF´ level (=1/2V_SS), the inverter can be used as a tristate inverter. Circuit techniques to propagate the HALF level are given. This enables the general design of tertiary logic circuits and possibly tertiary arithmetic circuits. Two application examples are given. Illustrative experiments based on commercial ICs have been carried out, and results that verify the theory are given. This should open the way for digital circuits and applications. Improvements on the HALF propagation are needed which, in addition to the circuit level, may be thought of on the process and/or the device levels

Keywords

CMOS integrated circuits; integrated logic circuits; logic gates; ternary logic; CMOS inverter; tertiary arithmetic circuits; tertiary logic circuits; tristate inverter; CMOS digital integrated circuits; CMOS logic circuits; CMOS technology; Digital circuits; Hysteresis; Inverters; Lab-on-a-chip; Operational amplifiers; Solid state circuits; Threshold voltage;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.333

Filename

333