Design and fabrication of a GaAs monolithic operational amplifier

Author

Katsu, Shin-Ichi ; Kazumura, Masaru ; Kano, Gota

Author_Institution

Matsushita Electron. Corp., Osaka, Japan

Volume

35

Issue

7

fYear

1988

fDate

7/1/1988 12:00:00 AM

Firstpage

831

Lastpage

838

Abstract

The design and fabrication of the GaAs monolithic operational amplifier are described. The DC gain and frequency characteristics are discussed in detail using an equivalent circuit. The experimentally fabricated chip exhibited a unity-gain frequency of 150 MHz, an open-loop gain of 48 dB, and a common-mode rejection ratio of 63 dB. The amplifier has wide applications in high-speed D/A (digital-to-analog) converter circuits and switched-capacitor filters for video signals

Keywords

III-V semiconductors; differential amplifiers; field effect integrated circuits; gallium arsenide; high-frequency amplifiers; integrated circuit technology; operational amplifiers; radiofrequency amplifiers; video amplifiers; wideband amplifiers; 150 MHz; 48 dB; D/A converters application; DC gain; GaAs monolithic operational amplifier; VHF; common-mode rejection ratio; design; equivalent circuit; fabrication; frequency characteristics; open-loop gain; semiconductors; switched-capacitor filters; unity-gain frequency; video signals; Bipolar transistors; Differential amplifiers; Equivalent circuits; FETs; Fabrication; Frequency; Gain; Gallium arsenide; Operational amplifiers; Transconductance;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.3333

Filename

3333