Title :
The benefits of bonding: silicon on insulator for bipolar ICs
Author_Institution :
Elettronica (UK) Ltd., UK
fDate :
11/17/1994 12:00:00 AM
Abstract :
The use of silicon on insulator (SOI) is currently restricted to MOS integrated circuits. The author describes a research programme aimed at extending the benefits of SOI to bipolar devices. The process uses twin wafers, electrochemically bonded to produce oxide-isolated active regions of high purity and very low defect density
Keywords :
bipolar integrated circuits; integrated circuit manufacture; silicon-on-insulator; wafer bonding; bipolar IC; electrochemically bonded wafers; high purity; oxide-isolated active regions; silicon on insulator; very low defect density;
Journal_Title :
IEE Review
DOI :
10.1049/ir:19940611
