An Improved Physics-Based Formulation of the Microwave p-i-n Diode Impedance

Author

Gatard, Emmanuel ; Sommet, Raphaël ; Bouysse, Philippe ; Quéré, Raymond

Author_Institution

Dept. of High Frequency Components Circuits Signals & Syst., XLIM CNRS Res. Lab., Brive La Gaillarde

Volume

17

Issue

3

fYear

2007

fDate

3/1/2007 12:00:00 AM

Firstpage

211

Lastpage

213

Abstract

An improved formulation of the frequency-dependent impedance for p-i-n diodes from physical and geometrical parameters is presented. This work is addressed to diode designers and allows them to evaluate quickly and accurately the diode impedance. It comes in parallel with existing SPICE p-i-n diode model used in CAD software. Under forward bias conditions, important recombinations occur in the heavily doped end regions of thin p-i-n diodes that seriously affects the diode impedance. This effect is taken into account to increase the accuracy of existing numerical models and to extend their validity domain to any I-region thicknesses. This improvement has been validated by measurement results on a 5-mum I-region width silicon p-i-n diode

Keywords

SPICE; carrier lifetime; electric impedance; electron-hole recombination; microwave diodes; p-i-n diodes; 5 micron; CAD software; I-region thicknesses; SPICE; bias-dependent impedance; carrier lifetime; forward bias; frequency-dependent impedance; improved physics-based formulation; microwave p-i-n diode impedance; Charge carrier density; Charge carrier lifetime; Charge carrier processes; Frequency; Impedance; Numerical models; P-i-n diodes; Radiative recombination; Semiconductor diodes; Spontaneous emission; Bias-dependent impedance; carrier lifetime; forward bias; p-i-n diode; recombinations;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2006.890483

Filename

4118204