Simplified Analytical Model and High Power Characteristics of InGaP/GaAs HBTs at X-Band

Author

Park, Jae-Woo

Author_Institution

Electr. Eng. & Comput. Sci. Dept., Korean Adv. Inst. of Sci. & Technol. (KAIST), Daejon

Volume

17

Issue

3

fYear

2007

fDate

3/1/2007 12:00:00 AM

Firstpage

214

Lastpage

216

Abstract

Simplified large-signal analysis and high power characterization of InGaP/GaAs heterojunction bipolar transistors (HBTs) at X-band are reported. The simplified analytical model suggested in this work allows a first order prediction of the power performance trends as functions of device physical parameters. The solution to nonlinear equations governing the large signal behavior of the transistor is found by an iterative approach. The impact of different large signal parameters on the power performance of HBTs has been analyzed. Under class B operation, a 10-finger 2times20mum² HBT at V_CE= 10V achieves a maximum output power of 1.08W (5.4W/mm) with power-added efficiency of 44%

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; iterative methods; microwave bipolar transistors; nonlinear equations; 1.08 W; 10 V; 44 percent; 8 to 12 GHz; InGaP-GaAs; X-band HBT; device physical parameters; first order prediction; heterojunction bipolar transistors; high power characteristics; iterative approach; large-signal analysis; nonlinear equations; power density; power performance; simplified analytical model; Analytical models; Costs; Cutoff frequency; Gallium arsenide; Gold; Heterojunction bipolar transistors; Nonlinear equations; Performance analysis; Signal analysis; Voltage; Analytical model; InGaP heterojunction bipolar transistors (HBTs); X-band; large-signal parameters; power density;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2006.890490

Filename

4118207