• DocumentCode
    11967
  • Title

    Fine-Grained Architecture in Dark Silicon Era for SRAM-Based Reconfigurable Devices

  • Author

    Yazdanshenas, Sadegh ; Asadi, Hamed

  • Author_Institution
    Dept. of Comput. Eng., Sharif Univ. of Technol., Tehran, Iran
  • Volume
    61
  • Issue
    10
  • fYear
    2014
  • fDate
    Oct. 2014
  • Firstpage
    798
  • Lastpage
    802
  • Abstract
    In this brief, we present a fine-grained dark silicon architecture to facilitate further integration of transistors in static random access memory-based reconfigurable devices. In the proposed architecture, we present a technique to power off inactive configuration cells in nonutilized or underutilized logic blocks. We also propose a routing circuitry capable of turning off the configuration cells of connection blocks (CBs) and switch boxes (SBs) in the routing fabric. Experimental results carried out on the Microelectronics Center of North Carolina benchmark show that power consumption in configuration cells of lookup tables, CBs, and SBs can, on average, be reduced by 27%, 75%, and 4%, respectively.
  • Keywords
    SRAM chips; logic devices; low-power electronics; network routing; SRAM based reconfigurable devices; connection blocks; dark silicon era; fine grained architecture; inactive configuration cell power off technique; nonutilized logic block; routing circuit; routing fabric; static random access memory; switch box; transistor integration; underutilized logic block; Power demand; Routing; SRAM cells; Silicon; Table lookup; Transistors; Turning; Dark silicon; dependability; power consumption; routing fabric; static random access memory (SRAM)-based reconfigurable devices;
  • fLanguage
    English
  • Journal_Title
    Circuits and Systems II: Express Briefs, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1549-7747
  • Type

    jour

  • DOI
    10.1109/TCSII.2014.2345291
  • Filename
    6871385