DocumentCode
11967
Title
Fine-Grained Architecture in Dark Silicon Era for SRAM-Based Reconfigurable Devices
Author
Yazdanshenas, Sadegh ; Asadi, Hamed
Author_Institution
Dept. of Comput. Eng., Sharif Univ. of Technol., Tehran, Iran
Volume
61
Issue
10
fYear
2014
fDate
Oct. 2014
Firstpage
798
Lastpage
802
Abstract
In this brief, we present a fine-grained dark silicon architecture to facilitate further integration of transistors in static random access memory-based reconfigurable devices. In the proposed architecture, we present a technique to power off inactive configuration cells in nonutilized or underutilized logic blocks. We also propose a routing circuitry capable of turning off the configuration cells of connection blocks (CBs) and switch boxes (SBs) in the routing fabric. Experimental results carried out on the Microelectronics Center of North Carolina benchmark show that power consumption in configuration cells of lookup tables, CBs, and SBs can, on average, be reduced by 27%, 75%, and 4%, respectively.
Keywords
SRAM chips; logic devices; low-power electronics; network routing; SRAM based reconfigurable devices; connection blocks; dark silicon era; fine grained architecture; inactive configuration cell power off technique; nonutilized logic block; routing circuit; routing fabric; static random access memory; switch box; transistor integration; underutilized logic block; Power demand; Routing; SRAM cells; Silicon; Table lookup; Transistors; Turning; Dark silicon; dependability; power consumption; routing fabric; static random access memory (SRAM)-based reconfigurable devices;
fLanguage
English
Journal_Title
Circuits and Systems II: Express Briefs, IEEE Transactions on
Publisher
ieee
ISSN
1549-7747
Type
jour
DOI
10.1109/TCSII.2014.2345291
Filename
6871385
Link To Document