The effect of heavy metal contamination in SIMOX on radiation hardness of MOS transistors

Author

Ipri, Alfred C. ; Jastrzebski, L. ; Peters, D.

Author_Institution

David Sarnoff Res. Center, Princeton, NJ, USA

Volume

10

Issue

12

fYear

1989

Firstpage

571

Lastpage

573

Abstract

It is shown that heavy metal contamination introduced during implantation of oxygen into silicon results in a reduction of SIMOX (separation by implanted oxygen) oxide radiation hardness. Radiation-induced back-channel leakage currents in MOS transistors processed in SIMOX films containing various levels of heavy metals, as measured by surface photovoltage (SPV), are a strong function of heavy metal concentration. It is concluded that SPV measurements of as-implanted SIMOX wafers can be used as a rapid, nondestructive quality control inspection technique to predict the radiation hardness of the SIMOX oxide prior to processing.<>

Keywords

inspection; insulated gate field effect transistors; ion implantation; radiation hardening (electronics); semiconductor technology; semiconductor-insulator boundaries; MOS transistors; O implantation; SIMOX; heavy metal concentration; heavy metal contamination; nondestructive quality control inspection; radiation hardness; radiation induced back channel leakage currents; separation by implanted oxygen; surface photovoltage; Annealing; Coatings; Iron; Leakage current; MOSFETs; Pollution measurement; Semiconductor films; Silicon; Surface contamination; Temperature;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.43143

Filename

43143