Experiments on hot electron noise in semiconductor materials for high-speed devices

Author

Bareikis, Vytautas ; Liberis, Juozapas ; Matulioniene, Ilona ; Matulionis, Arvydas ; Sakalas, Paulius

Author_Institution

Semicond. Phys. Inst., Vilnius, Lithuania

Volume

41

Issue

11

fYear

1994

fDate

11/1/1994 12:00:00 AM

Firstpage

2050

Lastpage

2060

Abstract

Experimental results on noise temperature and spectral density of current fluctuations (electron diffusion) at high electric fields in silicon, gallium arsenide, and indium phosphide are presented. The dominant noise sources are discussed in their relation to electron scattering mechanisms. Physical backgrounds of high speed-low noise performance (noise-speed tradeoff) are considered. Suppression in short samples of the fluctuations having long correlation time constant and (or) high threshold energy is discussed

Keywords

carrier mobility; current fluctuations; high field effects; hot carriers; semiconductor device noise; GaAs; InP; Si; correlation time constant; current fluctuations; electron diffusion; electron scattering mechanisms; high electric fields; high-speed devices; hot electron noise; noise temperature; noise-speed tradeoff; semiconductor materials; spectral density; threshold energy; Circuit noise; Delay; Electrons; Fluctuations; Indium phosphide; Noise figure; Semiconductor device noise; Semiconductor devices; Semiconductor materials; Temperature;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.333822

Filename

333822