A study of quantum interference fluctuations in deep sub-μm MOSFET´s under cryogenic conditions

Author

Ohata, Akiko ; Toriumi, Akira ; Koga, Junji

Author_Institution

ULSI Res. Lab., Toshiba Corp., Kawasaki, Japan

Volume

41

Issue

11

fYear

1994

fDate

11/1/1994 12:00:00 AM

Firstpage

2107

Lastpage

2111

Abstract

We investigated the phase coherence length, l_φ, in large Si-MOSFET´s fabricated using current process technology, with a particular emphasis on highly doped silicon substrates, and then studied the effects of quantum conductance fluctuations in deep sub-μm MOSFET´s, with channel length comparable to l_φ. We identified, in a 0.2 μm MOSFET, universal conductance fluctuations in the strong inversion regime and conductance fluctuations due to variable range hopping in the weak inversion regime. The drain bias dependence of these fluctuations indicates clearly that they become a serious concern only at drain voltages lower than 10 mV. Therefore, even if the wave nature of electrons results in quantum conductance fluctuations, it will not lead to a limitation on device miniaturization in future Si-ULSI´s

Keywords

MOSFET; cryogenic electronics; current fluctuations; elemental semiconductors; hopping conduction; inversion layers; quantum interference devices; silicon; 0.2 micron; 10 mV; Si; ULSI; channel length; cryogenic conditions; deep sub-micron MOSFETs; drain bias dependence; drain voltages; phase coherence length; quantum conductance fluctuations; quantum interference fluctuations; strong inversion regime; variable range hopping; weak inversion regime; Conductivity; Cryogenics; Electrons; Fluctuations; Impurities; Interference; MOSFET circuits; Magnetic field measurement; Magnetic fields; Scattering parameters;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.333829

Filename

333829