DocumentCode
1197471
Title
Low-frequency noise spectroscopy
Author
Jones, Brian K.
Author_Institution
Sch. of Phys. & Mater., Lancaster Univ., UK
Volume
41
Issue
11
fYear
1994
fDate
11/1/1994 12:00:00 AM
Firstpage
2188
Lastpage
2197
Abstract
Electrical noise in excess of thermal and shot noise is caused by imperfections in the device. Its control can improve the quality of the device and its measurement can give considerable information about the nature of the defects involved. For defects with discrete energy distributions spectroscopy can be used to identify the defect and measure its properties. Excess noise has large intensity at low frequencies and several mechanisms can be identified. The value of the technique for many systems is described. Comparison is made with other methods of studying such defects
Keywords
electric noise measurement; semiconductor device noise; semiconductor device reliability; semiconductor device testing; spectroscopy; LF noise; defects identification; discrete energy distributions; electrical noise; excess noise; low-frequency noise spectroscopy; Dielectric breakdown; Energy measurement; Fluctuations; Frequency; Gaussian noise; Low-frequency noise; Noise generators; Noise level; Spectroscopy; Time domain analysis;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.333840
Filename
333840
Link To Document