DocumentCode
1197502
Title
Device parameter changes caused by manufacturing fluctuations of deep submicron MOSFET´s
Author
Sitte, Renate ; Dimitrijev, Sima ; Harrison, H.Barry
Author_Institution
Sch. of Microelectron. Eng., Griffith Univ., Nathan, Qld., Australia
Volume
41
Issue
11
fYear
1994
fDate
11/1/1994 12:00:00 AM
Firstpage
2210
Lastpage
2215
Abstract
The effects of typical manufacturing fluctuations upon four electrical device parameters: threshold voltage, transconductance, substrate current and off current have been studied for deep submicron MOSFET´s (0.1 μm). The analysis reveals that the electrical parameter sensitivity in deep submicron devices differs from micron size devices, making a revision of the validity of conventional semiconductor manufacturing heuristics for future technology mandatory
Keywords
MOS integrated circuits; MOSFET; fluctuations; integrated circuit manufacture; semiconductor device manufacture; sensitivity analysis; 0.1 micron; deep submicron MOSFET; electrical device parameters; electrical parameter sensitivity; manufacturing fluctuations; offcurrent; substrate current; threshold voltage; transconductance; Annealing; Boron; Circuit simulation; Fluctuations; Implants; MOSFET circuits; Manufacturing; Semiconductor device manufacture; Substrates; Threshold voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.333843
Filename
333843
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