Calculation of contact currents in device simulation

Author

Nanz, Gerd ; Dickinger, Peter ; Selberherr, Siegfried

Author_Institution

Inst. for Microelectron., Tech. Univ. Vienna, Austria

Volume

11

Issue

1

fYear

1992

fDate

1/1/1992 12:00:00 AM

Firstpage

128

Lastpage

136

Abstract

The authors present an accurate new method for the calculation of the contact currents in a device simulation program which is applicable to arbitrarily shaped device geometries. The method is based on the evaluation of a volume integral of the calculated current densities over the whole device area with a suitably chosen weight function. Different types of weight functions are discussed and compared with the commonly used line integral along the contact. The results are illustrated by three examples: an I²L memory cell, an MOS transistor, and a resistor with a reverse-biased diode

Keywords

current density; electric current; integral equations; semiconductor device models; I²L memory cell; MOS transistor; arbitrarily shaped device geometries; contact currents; current densities; device simulation; line integral; resistor; reverse-biased diode; simulation program; volume integral; weight functions; Boundary conditions; Current density; Differential equations; Diodes; Geometry; Integral equations; Laplace equations; MOSFETs; Resistors; Senior members;

fLanguage

English

Journal_Title

Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Publisher

ieee

ISSN

0278-0070

Type

jour

DOI

10.1109/43.108625

Filename

108625