Injection behavior and modeling of 100 mW broad area diode lasers

Author

Abbas, Gregory L. ; Yang, S. ; Chan, Vincent W S ; Fujimoto, James G.

Author_Institution

MIT Lincoln Lab., Lexington, MA, USA

Volume

24

Issue

4

fYear

1988

fDate

4/1/1988 12:00:00 AM

Firstpage

609

Lastpage

617

Abstract

The output from a single-frequency, narrow-linewidth GaAlAs diode laser was injected into a 100-mW broad-area diode laser. The injected laser emitted in a single longitudinal mode with up to 80 mW in a single, diffraction-limited, 0.5 degrees FWHM far-field lobe. The angle of the far-field lobe steered with injection frequency and broad-area laser bias current, displaying behavior similar to that observed with injected gain-guided laser arrays. A Fabry-Perot amplifier model which explains the injection behavior in terms of Gaussian beam propagation in a large optical cavity is proposed. The model provides criteria for optimizing locking bandwidth, beam steering, and injection efficiency.<>

Keywords

laser modes; laser theory; semiconductor junction lasers; 100 mW; 80 mW; Fabry-Perot amplifier model; GaAlAs diode laser; Gaussian beam propagation; III-V semiconductor; beam steering; broad area diode lasers; broad-area laser bias current; injection behaviour; injection efficiency; injection frequency; large optical cavity; locking bandwidth; modeling; narrow-linewidth; single diffraction limited FWHM far field lobe; single longitudinal mode; single-frequency; Brain modeling; Diode lasers; Fabry-Perot; Frequency; Laser mode locking; Laser modes; Optical arrays; Optical diffraction; Semiconductor laser arrays; Semiconductor optical amplifiers;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.169

Filename

169