• DocumentCode
    1198788
  • Title

    High performance laser with nanopatterned active layer by selective area epitaxy

  • Author

    Elarde, V.C. ; Bryce, A.C. ; Coleman, J.J.

  • Author_Institution
    Micro & Nanotechnology Lab., Univ. of Illinois, Urbana, IL, USA
  • Volume
    41
  • Issue
    20
  • fYear
    2005
  • Firstpage
    1122
  • Lastpage
    1124
  • Abstract
    Lasers containing a nanopatterned active layer demonstrating excellent threshold characteristics are presented. The nanopatterned active layer is fabricated using high-resolution electron beam lithography and selective-area metal organic chemical vapour deposition crystal growth. Results demonstrating an order of magnitude improvement over previous results are reported.
  • Keywords
    MOCVD; electron beam lithography; nanopatterning; quantum dot lasers; semiconductor epitaxial layers; MOCVD; crystal growth; electron beam lithography; high performance laser; metal organic chemical vapour deposition; nanopatterned active layer; quantum dot lasers; selective area epitaxy; threshold characteristics;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20052936
  • Filename
    1522163