DocumentCode
1198916
Title
Velocity overshoot in ultra-short-gate-length GaAs MESFETs
Author
Bernstein, Gary ; Ferry, David K.
Author_Institution
Center for Solid State Electron. Res., Arizona State Univ., Tempe, AZ, USA
Volume
35
Issue
7
fYear
1988
fDate
7/1/1988 12:00:00 AM
Firstpage
887
Lastpage
892
Abstract
GaAs MESFETs with ultrashort gates between 0.035 and 0.065 μm were fabricated to determine trends in their DC transconductance as a function of gate length. It is found that overshoot in the channel causes a considerable increase in the average electron velocity. An approximation based on the gradual channel approximation becomes valid at ultrashort gate lengths due to an increased percentage of the channel that is velocity-saturated
Keywords
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; semiconductor device models; 35 to 65 nm; DC transconductance; GaAs; GaAs MESFETs; average electron velocity; gradual channel approximation; semiconductors; ultrashort gates; velocity overshoot; velocity-saturated; Electrons; Fabrication; Frequency; Gallium arsenide; Integrated circuit noise; MESFETs; Microwave devices; Noise figure; Solid state circuits; Transconductance;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.3340
Filename
3340
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