Title :
Numerical investigation of self-heating effects of oxide-confined vertical-cavity surface-emitting lasers
Author :
Yang Liu ; Wei-Choon Ng ; Choquette, K.D. ; Hess, K.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Illinois, Urbana, IL, USA
Abstract :
We present a comprehensive numerical model to simulate self-heating effects of oxide-confined vertical-cavity surface-emitting lasers (VCSELs) under continuous-wave operation. The model self-consistently accounts for the close interaction between optical, electrical, and thermal processes in VCSELs. In particular, hot carriers and nonequilibrium optical phonons in the quantum wells are modeled by solving a carrier energy balance equation and an optical phonon rate equation. Our numerical simulations reveal that they are responsible for aggravated thermal rollovers in VCSELs´ L-I characteristics. Detailed comparisons are made and good agreement is obtained between simulations and experiments for the L-I-V and lasing wavelength characteristics of VCSELs with varying oxide aperture size. Various mechanisms that result in the L-I thermal rollover behavior are also investigated with the aid of simulations.
Keywords :
hot carriers; laser cavity resonators; phonons; quantum well lasers; semiconductor device models; surface emitting lasers; thermo-optical effects; VCSEL; aggravated thermal rollovers; carrier energy balance equation; continuous-wave operation; electrical processes; hot carriers; lasing wavelength characteristics; nonequilibrium optical phonons; numerical model; optical phonon rate equation; optical processes; oxide aperture size; oxide-confined lasers; self-heating effects; thermal processes; vertical-cavity surface-emitting lasers; Equations; Hot carriers; Laser modes; Numerical models; Numerical simulation; Optical surface waves; Phonons; Quantum well lasers; Surface emitting lasers; Vertical cavity surface emitting lasers; Charge carrier processes; distributed Bragg reflector lasers; hot carriers; laser reliability; laser thermal factors; semiconductor heterojunctions; semiconductor lasers;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.2004.839239