DocumentCode
1200017
Title
Coexistence of antiferromagnetic and ferromagnetic clusters in compositionally modulated amorphous FexZr100-x (66⩽x⩽85) thin films
Author
Cho, Byung-Li ; Win, Winston ; Manthiram, A. ; Walser, R.M.
Author_Institution
Center for Mater. Sci. & Eng., Texas Univ., Austin, TX, USA
Volume
30
Issue
6
fYear
1994
fDate
11/1/1994 12:00:00 AM
Firstpage
4443
Lastpage
4445
Abstract
Previous research has shown that different magnetic (antiferromagnetic AFM and ferromagnetic FM) clusters can coexist in amorphous FexZr100-x alloys with compositions in the range 88⩽x⩽93. This research shows that in compositionally modulated (CM) amorphous thin films, this range can be extended to x=66. Three coexisting states (one AFM and two different FM states) are observed in CM films in the range 66⩽x⩽85. With increasing Fe, the Curie temperature Tc1 of the ferromagnetic matrix phase FM1 increased from 134 K to 273 K. The existence of FM2 was evident in the residual magnetization observed for T≫Tc1, and in the 300°K hysteresis loops. The AFM spin clusters were evidenced in the exchange shifted hysteresis loops at 50 K. The extended compositional range for stable heterogeneity with the CM film deposition is due to the removal of restrictions imposed on atomic supply in alloy deposition
Keywords
Curie temperature; amorphous magnetic materials; antiferromagnetic materials; exchange interactions (electron); ferromagnetic materials; iron alloys; magnetic hysteresis; magnetic particles; magnetic thin films; zirconium alloys; 134 to 273 K; 300 K; 300°K hysteresis loops; 50 K; AFM spin clusters; Curie temperature; FeZr; antiferromagnetic; compositionally modulated amorphous FexZr100-x film; exchange shifted hysteresis loops; ferromagnetic clusters; residual magnetization; Amorphous magnetic materials; Amorphous materials; Antiferromagnetic materials; Atomic layer deposition; Iron alloys; Magnetic hysteresis; Magnetization; Temperature; Transistors; Zirconium;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/20.334114
Filename
334114
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