DocumentCode :
1200475
Title :
Magnetic field sensors using GMR multilayer
Author :
Daughton, J. ; Brown, J. ; Chen, E. ; Beech, R. ; Pohm, A. ; Kude, W.
Author_Institution :
Nonvolatile Electron Inc., Eden Prairie, MN, USA
Volume :
30
Issue :
6
fYear :
1994
fDate :
11/1/1994 12:00:00 AM
Firstpage :
4608
Lastpage :
4610
Abstract :
Wheatstone bridge magnetic field sensors using giant magnetoresistive ratio (GMR) multilayers were designed, fabricated, and evaluated. The GMR ranged from 10% to 20% with saturation fields of 60 Oe to 300 Oe. The multilater resistances decreased linearly with magnetic field and showed little hysteresis. In one sensor configuration, a permanent magnet bias was placed between two pairs of magnetoresistors, each pair representing opposite legs of the bridge. This sensor gave a bipolar bridge output whose output range was approximately GMR times the bridge source voltage. The second sensor configuration used shielding on one resistor pair, and it gave a bridge output dependent on the magnetic field magnitude, but not polarity, and the output range was approximately one half GMR tines the bridge source voltage. Field amplifications of 3 to 6 were accomplished by creating a gap in a low reluctance magnetic path, thus providing the full range of outputs with 1/3 to 1/6 of the intrinsic saturation fields of the GMR multilayers
Keywords :
giant magnetoresistance; magnetic multilayers; magnetic sensors; magnetic shielding; magnetoresistive devices; Wheatstone bridge magnetic field sensors; bipolar bridge; field amplification; giant magnetoresistive ratio multilayers; intrinsic saturation fields; permanent magnet; shielding; Bridge circuits; Giant magnetoresistance; Magnetic fields; Magnetic hysteresis; Magnetic multilayers; Magnetic sensors; Magnetic shielding; Magnetoresistive devices; Permanent magnets; Voltage;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/20.334164
Filename :
334164
Link To Document :
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