InGaAs dual-pin detector with very symmetric properties for use in coherent optical receivers

Author

Bauer, Josef Georg ; Trommer, Reiner

Author_Institution

Siemens Res. Lab., Munich, West Germany

Volume

10

Issue

12

fYear

1989

Firstpage

583

Lastpage

584

Abstract

A dual InGaAs p-i-n photodiode structure based on metalorganic vapor-phase epitaxy or liquid-phase epitaxy layers grown on planar semi-insulating InP substrates is discussed. The photodetector shows very symmetric properties for the two devices. It is shown that an additional InP p-n junction beneath the photodiodes effectively blocks leakage currents through the substrate and results in dark currents on the order of 100 pA for both of the electrically connected photodiodes.<>

Keywords

III-V semiconductors; gallium arsenide; indium compounds; liquid phase epitaxial growth; optical communication equipment; p-i-n diodes; photodiodes; semiconductor growth; substrates; vapour phase epitaxial growth; 100 pA; InGaAs-InP; InP p-n junction; LPE; MOVPE; coherent optical receivers; dark currents; dual photodiode structure; electrically connected photodiodes; liquid-phase epitaxy; metalorganic vapor-phase epitaxy; p-i-n photodiode structure; semiconductors; semiinsulating InP substrates; symmetric properties; Dark current; Detectors; Epitaxial growth; Indium gallium arsenide; Indium phosphide; Leakage current; P-n junctions; PIN photodiodes; Photodetectors; Substrates;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.43147

Filename

43147