Title :
InGaAs dual-pin detector with very symmetric properties for use in coherent optical receivers
Author :
Bauer, Josef Georg ; Trommer, Reiner
Author_Institution :
Siemens Res. Lab., Munich, West Germany
Abstract :
A dual InGaAs p-i-n photodiode structure based on metalorganic vapor-phase epitaxy or liquid-phase epitaxy layers grown on planar semi-insulating InP substrates is discussed. The photodetector shows very symmetric properties for the two devices. It is shown that an additional InP p-n junction beneath the photodiodes effectively blocks leakage currents through the substrate and results in dark currents on the order of 100 pA for both of the electrically connected photodiodes.<>
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; liquid phase epitaxial growth; optical communication equipment; p-i-n diodes; photodiodes; semiconductor growth; substrates; vapour phase epitaxial growth; 100 pA; InGaAs-InP; InP p-n junction; LPE; MOVPE; coherent optical receivers; dark currents; dual photodiode structure; electrically connected photodiodes; liquid-phase epitaxy; metalorganic vapor-phase epitaxy; p-i-n photodiode structure; semiconductors; semiinsulating InP substrates; symmetric properties; Dark current; Detectors; Epitaxial growth; Indium gallium arsenide; Indium phosphide; Leakage current; P-n junctions; PIN photodiodes; Photodetectors; Substrates;
Journal_Title :
Electron Device Letters, IEEE
