DocumentCode :
1200932
Title :
Survey on flash technology with specific attention to the critical process parameters related to manufacturing
Author :
Ginami, Giancarlo ; Canali, Danilo ; Fattori, Davide ; Girardi, Giuliana ; Scintu, Petronilla ; Tarchini, Laura ; Tricarico, Domenica
Author_Institution :
Central Res. & Dev. Dept., STMicroelectronics, Agrate Brianza, Italy
Volume :
91
Issue :
4
fYear :
2003
fDate :
4/1/2003 12:00:00 AM
Firstpage :
503
Lastpage :
522
Abstract :
In this paper, the history of flash processes will be presented, starting with the 1.2-μm technology to the most current technology. The front- and back-end process modules will be reviewed taking into account the main impact on cell functionality and reliability. In particular, the lithographic and mask issues, the diffusion and cleaning process steps, the chemical mechanical planarization technique to improve planarization, and the high-energy and large-tilted implant will be covered. Finally, the process and equipment trends for the next-generation flash technology will be presented.
Keywords :
CMOS memory circuits; chemical mechanical polishing; flash memories; integrated circuit manufacture; integrated circuit reliability; integrated circuit technology; ion implantation; photolithography; sputter etching; surface cleaning; 1.2 micron; CMOS transistor scaling; back-end process modules; cell functionality; cell reliability; chemical mechanical planarization technique; cleaning process steps; critical process parameters; diffusion; flash technology; front-end process modules; high-energy large-tilted implant; history; lithographic issues; manufacturing; mask issues; next-generation flash technology; CMOS technology; Flash memory; Irrigation; Manufacturing processes; Nonvolatile memory; Planarization; Production; Pulp manufacturing; Random access memory; Transistors;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/JPROC.2003.811703
Filename :
1199080
Link To Document :
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