Title :
Epitaxial growth and magnetic properties of Fe films on Si substrates
Author :
Yaegashi, Seiji ; Kurihara, Toshiya ; Sat, Kazuyuki ; Segawa, Hideo
Author_Institution :
Mater. Lab., Japan Energy Corp., Toda, Japan
fDate :
11/1/1994 12:00:00 AM
Abstract :
Epitaxial growth of Fe films on Si(100), Si(110), and Si(111) substrates was achieved by dc facing targets sputtering. Substrate dc bias was found to be an important parameter to achieve epitaxial growth. Epitaxial films were not obtained without a dc substrate bias except those on Si(111) substrates. In-plane anisotropy energy for Fe(110) plane was different from the bulk. Uniaxial anisotropy and magnetoelastic energy should be considered with magnetocrystalline anisotropy
Keywords :
ferromagnetic materials; iron; magnetic anisotropy; magnetic thin films; magnetoelastic effects; metallic epitaxial layers; sputtered coatings; Fe; Fe films on Si substrates; Si; dc facing targets sputtering; epitaxial growth; in-plane anisotropy energy; magnetic properties; magnetocrystalline anisotropy; magnetoelastic energy; uniaxial anisotropy; Anisotropic magnetoresistance; Epitaxial growth; Iron; Magnetic anisotropy; Magnetic films; Magnetic properties; Perpendicular magnetic anisotropy; Semiconductor films; Sputtering; Substrates;
Journal_Title :
Magnetics, IEEE Transactions on
