Comparison of the Punch-Through and Non-Punch-Through IGT Structures

Author

Yilmaz, Hamza ; Benjamin, John L. ; Dyer, Raymond F., Jr. ; Chen, Li-Shu S. ; Van Dell, W.Ron ; Pifer, George C.

Author_Institution

Power Electronics Semiconductor Department, General Electric Company, Building 7, Box 2, Electronics Park, Syracuse, NY 13221.

Issue

3

fYear

1986

fDate

5/1/1986 12:00:00 AM

Firstpage

466

Lastpage

470

Abstract

The insulated gate transistor (IGT) has been modeled as a wide-base bipolar junction transistor (BJT) driven by a MOSFET. Therefore, the vertical wide-base BJT structure influences the following IGT characteristics: 1) the forward current-voltage characteristics, 2) the fall time/forward-voltage drop trade-offs, 3) the high-temperature blocking, and 4) the turn-off current tail. An IGT with punch-through (PT) BJT yields lower forward voltage than that of an IGT with non-punch-through (NPT) BJT due to the thinner base of the PT BJT structure. The punch-through IGT has lower off-state (leakage) current and also shorter turn-off current tail due to lower current gain of a PT BJT than that of an NPT BJT. Both PT and NPT IGT´s have large safe operation areas.

Keywords

Equivalent circuits; FETs; Industry Applications Society; Insulated gate bipolar transistors; Insulation; MOSFET circuits; Power MOSFET; Semiconductor optical amplifiers; Tail; Voltage;

fLanguage

English

Journal_Title

Industry Applications, IEEE Transactions on

Publisher

ieee

ISSN

0093-9994

Type

jour

DOI

10.1109/TIA.1986.4504744

Filename

4504744