Reduction of the surface recombination current in InGaAs/InP pseudo-heterojunction bipolar transistors using a thin InP passivation layer

Author

Tokumitsu, E. ; Dentai, Andrew G. ; Joyner, C.H.

Author_Institution

AT&T Bell Lab., Holmdel, NJ, USA

Volume

10

Issue

12

fYear

1989

Firstpage

585

Lastpage

587

Abstract

In an InGaAs/InP pseudo-heterojunction bipolar transistor (PHBT) with InP passivation, regions from the emitter mesa edge to the base contact are protected by a thin InP barrier layer. By using such a passivation, the surface recombination current is effectively suppressed. The DC current gain obtained for such a PHBT is as high as 455, compared to a maximum value of 240 for a normally passivated PHBT. The current gain is also found to be independent of the perimeter-to-area ratio of the emitter mesa as a result of the passivation.<>

Keywords

III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; passivation; semiconductor technology; DC current gain; HBT; InGaAs-InP; InP barrier layer; InP passivation layer; emitter mesa; perimeter-to-area ratio; pseudo-heterojunction bipolar transistors; semiconductors; surface recombination current reduction; Application specific integrated circuits; Bipolar transistors; Epitaxial growth; Epitaxial layers; Heterojunction bipolar transistors; III-V semiconductor materials; Indium gallium arsenide; Indium phosphide; Passivation; Radiative recombination;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.43148

Filename

43148