Title :
High-power AlGaN/GaN HEMTs for Ka-band applications
Author :
Palacios, T. ; Chakraborty, A. ; Rajan, S. ; Poblenz, C. ; Keller, S. ; DenBaars, S.P. ; Speck, J.S. ; Mishra, U.K.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of California, Santa Barbara, CA, USA
Abstract :
We report on the fabrication and high-frequency characterization of AlGaN/GaN high-electron mobility transistors (HEMTs) grown by molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD). In devices with a gate length of 160 nm, a record power density of 10.5 W/mm with 34% power added efficiency (PAE) has been measured at 40 GHz in MOCVD-grown HEMTs biased at VDS=30 V. Under similar bias conditions, more than 8.6 W/mm, with 32% PAE, were obtained on the MBE-grown sample. The dependence of output power, gain, and PAE on gate and drain voltages, and frequency have also been analyzed.
Keywords :
III-V semiconductors; MOCVD coatings; aluminium compounds; gallium compounds; millimetre wave field effect transistors; millimetre wave power transistors; molecular beam epitaxial growth; power HEMT; semiconductor epitaxial layers; wide band gap semiconductors; 160 nm; 30 V; 40 GHz; AlGaN-GaN; Ka-band applications; MBE; MOCVD; drain voltage; gate voltage; high electron mobility transistor; high-frequency performance; high-power HEMT; metal-organic chemical vapor deposition; millimeter-wave devices; mm-wave devices; molecular beam epitaxy; power added efficiency; power density; Aluminum gallium nitride; Chemical vapor deposition; Density measurement; Fabrication; Gallium nitride; HEMTs; MOCVD; MODFETs; Molecular beam epitaxial growth; Power measurement; Gallium nitride; high-electron mobility transistor (HEMT); high-frequency performance; millimeter-wave (mm-wave) devices; output power;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2005.857701
