• DocumentCode
    12017
  • Title

    Evolution of Unified-RAM: 1T-DRAM and BE-SONOS Built on a Highly Scaled Vertical Channel

  • Author

    Dong-Il Moon ; Jee-Yeon Kim ; Joon-Bae Moon ; Dong-Oh Kim ; Yang-Kyu Choi

  • Author_Institution
    Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea
  • Volume
    61
  • Issue
    1
  • fYear
    2014
  • fDate
    Jan. 2014
  • Firstpage
    60
  • Lastpage
    65
  • Abstract
    4F2 multifunctional unified-RAM based on a highly scaled vertical channel is experimentally demonstrated. The high performance and reliable operation of bandgap-engineered nonvolatile memory as well as underlap 1T-DRAM with nonuniform channel doping for a long retention time and endurable operation is presented in a single transistor.
  • Keywords
    DRAM chips; semiconductor doping; 4F2 multifunctional unified-RAM; BE-SONOS; bandgap-engineered nonvolatile memory; highly scaled vertical channel; nonuniform channel doping; retention time; single transistor; underlap 1T-DRAM; Computer architecture; Doping; Logic gates; Moon; Nonvolatile memory; Silicon; Tunneling; Bandgap engineering; SONOS; capacitorless 1T-DRAM; multifunction; nonvolatile memory; unified-RAM (URAM); vertical channel;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2013.2292316
  • Filename
    6678770
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=12017