Title :
Analysis of active matrix GaN-based HFET switch circuits integrated with GaN LED micro-displays
Author :
Shih, Ghien An ; Huang, Jian Jang
Author_Institution :
Graduate Inst. of Electro-Opt. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
We demonstrate a novel GaN-based heterojunction field effect transistor (HFET) active-matrix circuit for an light-emitting diode (LED) microdisplay. Simulation results are shown with basic and improved circuits. Variations of process and material growth conditions are discussed by correlating device parameters with LED flow currents in this circuit. It shows that the HFET-LED control circuit approach provides a stability path to mitigate variations of LED currents during operations.
Keywords :
field effect transistor circuits; gallium compounds; high electron mobility transistors; light emitting diodes; microdisplays; wide band gap semiconductors; GaN; GaN LED microdisplay; GaN-based HFET; HFET-LED control circuit; active matrix circuit; heterojunction field effect transistor; light-emitting diode microdisplay; switch circuits; Active matrix technology; FETs; Gallium nitride; HEMTs; Heterojunctions; Light emitting diodes; MODFETs; Microdisplays; Switches; Switching circuits; GaN; heterojunction field effect transistor (HFET); light-emitting diode (LED); microdisplays;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2005.857721
