Title :
Geometric effect of nickel source on low-temperature polycrystalline silicon TFTs by metal-induced lateral crystallization
Author :
Li, J.F. ; Sun, X.W. ; Qi, G.J. ; Sin, Johnny K O ; Huang, H. ; Zeng, X.T.
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
Abstract :
Low-temperature polycrystalline silicon thin-film transistors were fabricated by nickel-induced lateral crystallization of amorphous silicon. Line and oval-shaped nickel source patterns were compared. The oval-shaped nickel source was found to render better device performance, including lower leakage current and higher on/off current ratio. The observation is interpreted by the crystallization and nickel diffusion behavior. The oval-shaped nickel source introduces less nickel in the channels, which is the physical mechanism responsible for the improved performance.
Keywords :
amorphous semiconductors; crystallisation; diffusion; nickel; silicon; thin film transistors; Ni; Si; amorphous silicon; geometric effect; leakage current; low-temperature polycrystalline silicon TFT; low-temperature polycrystalline silicon thin-film transistors; metal-induced lateral crystallization; nickel diffusion; nickel-induced lateral crystallization; on/off current ratio; oval-shaped nickel source; Amorphous silicon; Crystallization; Geometry; Leakage current; Manufacturing; Nickel; Silicon compounds; Sun; Thin film transistors; Wet etching; Geometric effect; metal-induced lateral crystallization; polycrystalline silicon; thin-film transistor (TFT);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2005.857732
