Title :
Experimental study on superior mobility in [110]-oriented UTB SOI pMOSFETs
Author :
Tsutsui, Gen ; Saitoh, Masumi ; Hiramoto, Toshiro
Author_Institution :
Inst. of Ind. Sci., Univ. of Tokyo, Japan
Abstract :
The superior mobility in [110]-oriented ultrathin body (UTB) pMOSFETs with silicon-on-insulator (SOI) thickness (tSOI) ranging from 32 down to 2.3 nm is experimentally examined for the first time. It is shown that the mobility in [110] UTB pMOSFETs, which is much higher than the universal curve in conventional (100) pMOSFETs, is not degraded until tSOI is thinned to 3 nm. Scattering mechanisms in [110] UTB pMOSFETs are discussed on the basis of the temperature dependence of the mobility. The high mobility in the UTB regime in [110] pMOSFET is attributed to subband modulation by carrier confinement and heavier hole effective mass normal to the channel surface.
Keywords :
MOSFET; hole mobility; silicon-on-insulator; UTB SOI pMOSFET; carrier confinement; hole effective mass; hole mobility; quantum confinement effect; scattering mechanism; silicon-on-insulator; subband modulation; temperature dependence; ultrathin body UTB pMOSFET; Carrier confinement; Degradation; Effective mass; Electric variables measurement; Electrical resistance measurement; Fabrication; MOSFETs; Particle scattering; Silicon on insulator technology; Temperature dependence; (110); Hole mobility; quantum confinement effect; subband modulation; ultrathin-body (UTB) SOI MOSFET;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2005.857725
