Title :
Vertical-type amorphous-silicon MOSFET ICs
Author :
Okada, H. ; Uchida, Yasuo ; Arai, Kazumasa ; Oda, Shunri ; Matsumura, Masakiyo
Author_Institution :
Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Japan
fDate :
7/1/1988 12:00:00 AM
Abstract :
The performance of vertical-type amorphous-silicon (a-Si) MOSFETs has been improved significantly by using native silicon dioxide as the gate insulator. The maximum field-effect mobility was 1.2 cm2/V-s. An E/E-type inverter and a seven-stage ring oscillator have been fabricated by integrating the vertical-type a-Si MOSFET. The minimum propagation delay time was 95 ns/stage. The characteristics of a flip-flop circuit are also described
Keywords :
amorphous semiconductors; elemental semiconductors; field effect integrated circuits; integrated circuit technology; integrated logic circuits; invertors; oscillators; silicon; 95 ns; E/E-type inverter; amorphous Si; characteristics; field-effect mobility; flip-flop circuit; gate insulator; native SiO2 gate insulator; performance; propagation delay time; seven-stage ring oscillator; vertical amorphous MOSFET ICs; Chromium; Electrodes; Electrons; FETs; Fabrication; Insulation; Inverters; MOSFET circuits; Oxidation; Silicon compounds;
Journal_Title :
Electron Devices, IEEE Transactions on
