Characteristics of MOSFETs on large-grain polysilicon films

Author

Katoh, Teruo

Author_Institution

Oki Electr. Ind. Co., Tokyo, Japan

Volume

35

Issue

7

fYear

1988

fDate

7/1/1988 12:00:00 AM

Firstpage

923

Lastpage

928

Abstract

Polysilicon transistors with improved characteristics are reported. Solid-phase crystallization of evaporated amorphous silicon is used to grow grains in the film up to 3.5 μm. MOSFETs fabricated on this poly-Si film exhibit a carrier mobility of 165 cm²/V-s for electrons and 69 cm²/V-cm for holes. CMOS 100-stage inverter chains with propagation delay times of 400 ps/stage are demonstrated. The dependence of electrical characteristics on channel length is found and explained by the number of grain boundaries in the channel region. The results indicate that the characteristics of MOSFETs are improved if the grain size of the poly-Si film is as large as the device dimensions. All the devices fabricated are applicable to high-density VLSIs

Keywords

CMOS integrated circuits; elemental semiconductors; insulated gate field effect transistors; integrated circuit technology; integrated logic circuits; invertors; silicon; 3.5 micron; 400 ps; CMOS; MOSFETs; amorphous Si crystallisation; carrier mobility; channel length; channel region; electrical characteristics; grain size; inverter chains; number of grain boundaries; polycrystalline Si films; polycrystalline transistors; propagation delay times; Amorphous silicon; Charge carrier processes; Crystallization; Electric variables; Electron mobility; Grain boundaries; Inverters; MOSFETs; Propagation delay; Semiconductor films;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.3346

Filename

3346