• DocumentCode
    1202416
  • Title

    The Island-Gate Varactor—A High-Q MOS Varactor for Millimeter-Wave Applications

  • Author

    Oh, Yongho ; Kim, Sooyeon ; Lee, Seungyong ; Rieh, Jae-Sung

  • Author_Institution
    Sch. of Electr. Eng., Korea Univ., Seoul
  • Volume
    19
  • Issue
    4
  • fYear
    2009
  • fDate
    4/1/2009 12:00:00 AM
  • Firstpage
    215
  • Lastpage
    217
  • Abstract
    A new accumulation MOS varactor with island-shaped poly gate layout is proposed to improve the quality factor ( Q-factor) at high frequency, which can be readily employed for CMOS-based millimeter-wave applications. Measured results up to 67 GHz show significant improvements in the Q-factor and the series resistance Rs over the conventional multi-finger MOS varactors with the same ground rule and gate area. The proposed island-gate MOS varactor is expected to improve the overall Q-factor of the LC tank of millimeter-wave oscillators.
  • Keywords
    CMOS integrated circuits; MIMIC; Q-factor; varactors; CMOS-based millimeter-wave applications; LC tank; MOS varactor; Q-factor; high-Q MOS varactor; island-gate MOS varactor; millimeter-wave applications; series resistance; $Q$-factor; Millimeter-wave; varactors;
  • fLanguage
    English
  • Journal_Title
    Microwave and Wireless Components Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1531-1309
  • Type

    jour

  • DOI
    10.1109/LMWC.2009.2015499
  • Filename
    4804622