Title :
Scaling-parameter-dependent model for subthreshold swing S in double-gate SOI MOSFET´s
Author :
Tosaka, Yoshiharu ; Suzuki, Kunihiro ; Sugii, Toshihiro
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
Abstract :
We derived a simple formula for the subthreshold swing S in double-gate (DG) SOI MOSFET´s. Our formula, which depends only on a scaling device parameter, matches the device simulation results. From these results, our equations are simple and give a scaling rule for DG-SOI MOSFET´s.<>
Keywords :
MOSFET; semiconductor device models; silicon-on-insulator; device simulation; double-gate SOI MOSFET; punchthrough current; scaling device parameter; scaling rule; scaling-parameter-dependent model; subthreshold swing; Boundary conditions; Channel bank filters; Charge carrier density; Dielectric constant; Doping; MOSFET circuits; Numerical simulation; Poisson equations; Silicon compounds; Threshold voltage;
Journal_Title :
Electron Device Letters, IEEE
