• DocumentCode
    1202501
  • Title

    0.10 μm graded InGaAs channel InP HEMT with 305 GHz fT and 340 GHz fmax

  • Author

    Wojtowicz, M. ; Lai, R. ; Streit, D.C. ; Ng, G.I. ; Block, T.R. ; Tan, K.L. ; Liu, P.H. ; Freudenthal, A.K. ; Dia, R.M.

  • Author_Institution
    TRW Inc., Redondo Beach, CA, USA
  • Volume
    15
  • Issue
    11
  • fYear
    1994
  • Firstpage
    477
  • Lastpage
    479
  • Abstract
    We report here 305 GHz fT, 340 GHz fmax, and 1550 mS/mm extrinsic g/sub m/ from a 0.10 μm In/sub x/Ga/sub 1-x/As/In/sub 0.62/Al/sub 0.48/As/InP HEMT with x graded from 0.60 to 0.80. This device has the highest fT yet reported for a 0.10 μm gate length and the highest combination of fT and fmax reported for any three-terminal device. This performance is achieved by using a graded-channel design which simultaneously increases the effective indium composition of the channel while optimizing channel thickness.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; microwave field effect transistors; millimetre wave field effect transistors; 0.1 micron; 305 GHz; 340 GHz; InGaAs-In/sub 0.52/Al/sub 0.48/As-InP; InP HEMT; channel thickness optimisation; graded InGaAs channel; microwave transistor; Capacitive sensors; Carrier confinement; Degradation; Design optimization; Electron mobility; Frequency; HEMTs; Indium gallium arsenide; Indium phosphide; Performance analysis;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/55.334673
  • Filename
    334673
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1202501