Title :
Short- and long-term reliability of nitrided oxide MISFETs
Author :
Kaga, T. ; Hagiwara, Takaaki
Author_Institution :
Hitachi Ltd., Tokyo, Japan
fDate :
7/1/1988 12:00:00 AM
Abstract :
The short- and long-term reliability of thin nitrided oxide (oxynitride) films is studied. Tests conducted on several oxynitride films fabricated under various nitridation conditions show that (1) the defect density of thin (5-nm) oxynitride film is very low; (2) oxynitride MISFETs exhibit less transconductance degradation due to hot-carrier injection than oxide MISFETs; (3) these thin films have superior time-dependent dielectric breakdown characteristics; and (4) the electron traps in oxynitride film are drastically reduced by annealing in an O2 gas atmosphere
Keywords :
dielectric thin films; insulated gate field effect transistors; reliability; semiconductor technology; silicon compounds; 5 nm; O2 annealing atmosphere; SiO2-Si3N4 thin films; TDDB; annealing; defect density; electron traps; hot-carrier injection; long-term reliability; nitridation conditions; nitrided oxide; oxynitride MISFETs; oxynitride films; short term reliability; time-dependent dielectric breakdown characteristics; transconductance degradation; Annealing; Conductive films; Degradation; Dielectric breakdown; Dielectric thin films; Electron traps; Hot carrier injection; MISFETs; Testing; Transconductance;
Journal_Title :
Electron Devices, IEEE Transactions on
