DocumentCode :
1202829
Title :
Tensile-strained AlGaAsP and InGaAsP-(AlGa)/sub 0.5/In/sub 0.5/P quantum well laser diodes for TM-mode emission in the wavelength range 650
Author :
Bour, D.P. ; Treat, D.W. ; Beernink, K.J. ; Thornton, R.L. ; Paoli, T.L. ; Bringans, R.D.
Author_Institution :
Lab. of Electron. Mater., Xerox Palo Alto Res. Center, CA, USA
Volume :
6
Issue :
11
fYear :
1994
Firstpage :
1283
Lastpage :
1285
Abstract :
TM-polarized laser emission is demonstrated at wavelengths longer than 650 nm, for (AlGa)/sub 0.5/In/sub 0.5/P-based laser diodes. These structures contain tensile-strained AlGaAsP or InGaAsP quantum well active regions, which are capable of spanning a wavelength range of roughly 650-850 nm, for TM-mode lasers on GaAs substrates. This represents an extension of the wavelength range available from typical GaInP-(AlGa)/sub 0.5/In/sub 0.5/P lasers, where the requirement for biaxial tension limits the TM-mode wavelengths to less than 650 nm. In addition, compared to AlGaAs confining structures, the high-bandgap (AlGa)/sub 0.5/In/sub 0.5/P confinement structure used here makes AlGaAs(P) active regions feasible at shorter wavelengths, with good performance maintained for 670>
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser modes; quantum well lasers; (AlGa)/sub 0.5/In/sub 0.5/P-based laser diodes; 650 to 850 nm; AlGaAsP; AlGaInP; GaAs; GaAs substrates; InGaAsP; InGaAsP-(AlGa)/sub 0.5/In/sub 0.5/P; TM-mode emission; TM-mode wavelengths; TM-polarized laser emission; confinement structure; quantum well active regions; quantum well laser diodes; tensile-strained; wavelength range; Aluminum; Diode lasers; Epitaxial growth; Gallium arsenide; Laser modes; Optical materials; Photonic band gap; Quantum well lasers; Substrates; US Department of Commerce;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/68.334814
Filename :
334814
Link To Document :
