DocumentCode :
1202866
Title :
Temperature dependent loss and overflow effects in quantum well lasers
Author :
Mikhaelashvili, V. ; Tessler, N. ; Nagar, R. ; Eisenstein, G. ; Dentai, A.G. ; Chandrasakhar, S. ; Joyner, C.H.
Author_Institution :
Dept. of Electr. Eng., Technion-Israel Inst. of Technol., Haifa, Israel
Volume :
6
Issue :
11
fYear :
1994
Firstpage :
1293
Lastpage :
1296
Abstract :
We report a detailed study of the temperature dependent internal loss in 1550-nm quantum well lasers. Measurements of lasers with different cavity lengths as well as of lasers with modified facet reflectivities are presented. The internal loss is found to be mainly associated with intervalance band absorption and to include contributions from confined as well as unconfined carriers with the latter dominating at elevated temperatures. Measurements are consistent with calculations based on a detailed carrier injection model. Threshold current density dependence on temperature and on cavity length as well as photon density dependent internal losses are also addressed.<>
Keywords :
laser cavity resonators; optical losses; quantum well lasers; reflectivity; 1550 nm; carrier injection model; cavity lengths; confined carriers; elevated temperatures; intervalance band absorption; modified facet reflectivities; overflow effects; photon density dependent internal losses; quantum well lasers; temperature dependent internal loss; temperature dependent loss; threshold current density dependence; unconfined carriers; Absorption; Carrier confinement; Laser modes; Length measurement; Loss measurement; Quantum well lasers; Reflectivity; Temperature dependence; Temperature measurement; Threshold current;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/68.334817
Filename :
334817
Link To Document :
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