Temperature dependent loss and overflow effects in quantum well lasers

Author

Mikhaelashvili, V. ; Tessler, N. ; Nagar, R. ; Eisenstein, G. ; Dentai, A.G. ; Chandrasakhar, S. ; Joyner, C.H.

Author_Institution

Dept. of Electr. Eng., Technion-Israel Inst. of Technol., Haifa, Israel

Volume

6

Issue

11

fYear

1994

Firstpage

1293

Lastpage

1296

Abstract

We report a detailed study of the temperature dependent internal loss in 1550-nm quantum well lasers. Measurements of lasers with different cavity lengths as well as of lasers with modified facet reflectivities are presented. The internal loss is found to be mainly associated with intervalance band absorption and to include contributions from confined as well as unconfined carriers with the latter dominating at elevated temperatures. Measurements are consistent with calculations based on a detailed carrier injection model. Threshold current density dependence on temperature and on cavity length as well as photon density dependent internal losses are also addressed.<>

Keywords

laser cavity resonators; optical losses; quantum well lasers; reflectivity; 1550 nm; carrier injection model; cavity lengths; confined carriers; elevated temperatures; intervalance band absorption; modified facet reflectivities; overflow effects; photon density dependent internal losses; quantum well lasers; temperature dependent internal loss; temperature dependent loss; threshold current density dependence; unconfined carriers; Absorption; Carrier confinement; Laser modes; Length measurement; Loss measurement; Quantum well lasers; Reflectivity; Temperature dependence; Temperature measurement; Threshold current;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.334817

Filename

334817