High temperature characteristics of strained InGaAs/lnGaAsP quantum well lasers lattice matched to GaAs

Author

Park, Seoung-Hwan ; Jeong, Weon-Guk ; Choe, Byung-Doo

Author_Institution

Dept. of Phys., Hyosung Women´´s Univ., Kyeongbuk, South Korea

Volume

6

Issue

11

fYear

1994

Firstpage

1297

Lastpage

1299

Abstract

The effect of high temperature on the threshold current density and the gain of In/sub x/Ga/sub 1-x/As/InGaAsP (E/sub g/=1.6 eV) QW lasers lattice matched to GaAs is investigated theoretically. These results are also compared with those of In/sub x/Ga/sub 1-x/As/GaAs QW lasers. It is found that better performance can be achieved in InGaAs/InGaAsP lasers compared to InGaAs/GaAs lasers at high temperature. This is due to the fact that the temperature dependence of the threshold carrier density for InGaAs/InGaAsP lasers is weaker than that for InGaAs/GaAs lasers. The calculated characteristic temperature is in good agreement with reported experimental results.<>

Keywords

Debye temperature; III-V semiconductors; carrier density; current density; gallium arsenide; gallium compounds; indium compounds; quantum well lasers; 1.6 eV; GaAs; InGaAs-InGaAsP; high temperature; high temperature characteristics; lattice matched; strained InGaAs/lnGaAsP quantum well lasers; temperature dependence; threshold carrier density; threshold current density; Charge carrier processes; Fiber lasers; Gallium arsenide; Indium gallium arsenide; Laser theory; Lattices; Pump lasers; Quantum mechanics; Quantum well lasers; Temperature;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.334818

Filename

334818