Title :
Large estimated frequency response increase from deep potential well strained quantum well lasers
Author :
Ishikawa, H. ; Suemune, I.
Author_Institution :
Div. of Optoelectronics Res., Fujitsu Labs. Ltd., Atsugi, Japan
Abstract :
Effect of potential well depth on the maximum modulation bandwith has been analyzed for strained quantum well lasers emitting at 1.3 μm. The frequency response depends largely on the potential well depth. The maximum modulation bandwith of a deep-potential single-well SCH laser designed on a ternary substrate is estimated to be 25 GHz while that of the conventional InP based laser is 15 GHz. In a four-well case, the estimated bandwith of a laser designed on a ternary substrate is estimated to be 80 GHz.
Keywords :
frequency response; laser theory; optical modulation; quantum well lasers; 1.3 mum; 15 GHz; 25 GHz; 80 GHz; deep potential well; frequency response; maximum modulation bandwith; potential well depth; strained quantum well lasers; ternary substrate; Frequency estimation; Frequency response; Indium phosphide; Optical design; Optical modulation; Potential well; Quantum well lasers; Semiconductor lasers; Stimulated emission; Substrates;
Journal_Title :
Photonics Technology Letters, IEEE