Title :
Single-transverse-mode InGaAsP-InP edge-emitting bipolar cascade laser
Author :
Dross, Frédéric ; Van Dijk, Frédéric ; Parillaud, Olivier ; Vinter, Borge ; Vodjdani, Nakita
Author_Institution :
Alcatel-Thales III-V Lab., Marcoussis, France
Abstract :
In order to improve the radio frequency (RF) link gain of opto-RF links, we have designed, fabricated, and characterized a bipolar cascade laser (BCL). It includes two active regions and one highly doped backward-biased tunnel junction. In order to study the intrinsic properties, we have etched a 18-μm-wide deep-ridge. Comparing the result with a similar structure that does not recycle the carriers, we found an increase by a factor of two of the internal quantum efficiency. The same structure was etched into a 2.5-μm-wide shallow ridge laser. We demonstrate a single-transverse-mode edge-emitter 1.55-μm BCL with enhanced external efficiency, paving the way to short term opto-RF system characteristics improvement.
Keywords :
III-V semiconductors; etching; gallium arsenide; gallium compounds; indium compounds; laser modes; microwave photonics; quantum cascade lasers; 1.55 mum; 18 mum; 2.5 mum; InGaAsP-InP; InGaAsP-InP laser; backward-biased tunnel junction; bipolar cascade laser; edge-emitting laser; etching; highly doped tunnel junction; internal quantum efficiency; laser characterization; laser design; laser fabrication; optoRF links; radiofrequency link gain; shallow ridge laser; single-transverse-mode laser; Carrier confinement; Fiber lasers; Indium phosphide; Optical modulation; Quantum cascade lasers; Quantum well devices; Radio frequency; Semiconductor lasers; Surface emitting lasers; Vertical cavity surface emitting lasers; Bipolar cascade laser; Esaki diode; multiple-active-region laser; semiconductor cascade laser; tunnel junction;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.2005.857658
