Fully passivated AR coated InP/InGaAs MSM photodetectors

Author

Kollakowski, St. ; Schade, U. ; Bottcher, E.H. ; Bimberg, D.

Author_Institution

Inst. fur Festkorperphys., Tech. Univ. Berlin, Germany

Volume

6

Issue

11

fYear

1994

Firstpage

1324

Lastpage

1326

Abstract

We report on a technique for antireflection (AR) coating and surface passivation of InP:Fe/InGaAs:Fe metal-semiconductor-metal (MSM) photodetectors using nonreactive radio frequency (RF) magnetron sputtered silicon nitride. Excessive leakage currents and photocurrent gain, major performance-limiting factors of unpassivated detectors, were strongly suppressed in this way. The influence of various chemical pretreatments including sulfide passivation applied to the InP:Fe surface prior to the low-temperature silicon nitride deposition in optimizing the passivating process is investigated.<>

Keywords

III-V semiconductors; antireflection coatings; gallium arsenide; indium compounds; iron; leakage currents; metal-semiconductor-metal structures; optical films; passivation; photodetectors; sputtered coatings; surface phenomena; AR coated; InGaAs:Fe; InP/InGaAs MSM photodetectors; InP:Fe; InP:Fe-InGaAs:Fe; Si/sub 3/N/sub 4/; antireflection coating; chemical pretreatments; fully passivated; leakage currents; low-temperature silicon nitride deposition; metal-semiconductor-metal; nonreactive RF magnetron sputtered silicon nitride; performance-limiting factors; photocurrent gain; sulfide passivation; surface passivation; unpassivated detectors; Coatings; Indium gallium arsenide; Indium phosphide; Leakage current; Passivation; Performance gain; Photoconductivity; Photodetectors; Radio frequency; Silicon;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.334827

Filename

334827