Title :
Development of a photonic integrated transceiver chip for WDM transmission
Author :
Matz, R. ; Bauer, J.G. ; Clemens, P. ; Heise, G. ; Mahlein, H.F. ; Metzger, W. ; Michel, H. ; Schulte-Roth, G.
Author_Institution :
Corp. Res. & Dev., Siemens AG, Munchen, Germany
Abstract :
With the observed expansion of fiber-optic networks and the movement of line terminals towards the individual customer the need for cost-effective fabrication of customer access modules for interactive services arises. Monolithic integration of the module functions on InP is frequently seen as a means to reduce module costs. Here we describe a generic fabrication process for InP photonic integrated circuits and demonstrate an initial transceiver chip with transmit, receive and 1300/1530 nm wavelength division multiplexing functions. The chip output power reaches 1 mW at 1530 nm with a laser threshold current of 20 mA. The detection efficiency at 1300 nm is 0.1 A/W of fiber power.<>
Keywords :
III-V semiconductors; indium compounds; integrated optoelectronics; interactive systems; optical fabrication; optical fibre subscriber loops; transceivers; wavelength division multiplexing; 1 mW; 1300 nm; 1300/1530 nm wavelength division multiplexing; 1530 nm; 20 mA; InP; InP photonic integrated circuits; WDM transmission; chip output power; cost-effective fabrication; customer access modules; detection efficiency; fiber power; fiber-optic networks; generic fabrication process; individual customer; initial transceiver chip; interactive service; laser threshold current; line terminals; module costs; monolithic integration; photonic integrated transceiver chip; receive; transmit; Cost function; Fiber lasers; Indium phosphide; Monolithic integrated circuits; Optical device fabrication; Optical fiber networks; Photonic integrated circuits; Power generation; Transceivers; Wavelength division multiplexing;
Journal_Title :
Photonics Technology Letters, IEEE
