Theoretical analysis of low phase noise design of CMOS VCO

Author

Yao-Huang Kao ; Meng-Ting Hsu

Author_Institution

Inst. of Commun. Eng., Nat. Chiao-Tung Univ., Hsinchu, Taiwan

Volume

15

Issue

1

fYear

2005

Firstpage

33

Lastpage

35

Abstract

A theoretical analysis on low phase noise of voltage-controlled oscillators (VCOs) based on complementary cross-coupled LC VCO by 0.35-μm complementary metal oxide semiconductor technology is demonstrated. From the procedure of optimization steps, the excess noise factor of the amplifier coming from the active device has been determined. The proposed VCO operates at 2 GHz with phase noise of -116 dBc/Hz at offset frequency 600 kHz. The power consumption is 22.62 mW under 3 V bias with 9.1% frequency tuning. The achievement of low phase noise is also matched with prediction by formula in the frequency domain.

Keywords

CMOS integrated circuits; circuit tuning; integrated circuit design; integrated circuit noise; phase noise; voltage-controlled oscillators; 0.35 micron; 2 GHz; 22.62 mW; 3 V; 600 kHz; CMOS VCO; complementary cross-coupled LC VCO; frequency domain; frequency tuning; low phase noise design; noise factor; voltage-controlled oscillators; Active noise reduction; CMOS technology; Frequency; Inductance measurement; Inductors; Phase noise; Q factor; Semiconductor device noise; Varactors; Voltage-controlled oscillators; Complementary metal oxide semiconductor (CMOS); excess noise factor; phase noise; voltage-controlled oscillator (VCO);

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2004.840974

Filename

1377344