• DocumentCode
    1203851
  • Title

    Failure of moments-based transport models in nanoscale devices near equilibrium

  • Author

    Jungemann, Christoph ; Grasser, Tibor ; Neinhuus, Burkhard ; Meinerzhagen, Bernd

  • Author_Institution
    Inst. for Electron Devices & Circuits, Tech. Univ. Braunschweig, Germany
  • Volume
    52
  • Issue
    11
  • fYear
    2005
  • Firstpage
    2404
  • Lastpage
    2408
  • Abstract
    It is shown that the conductance in nanoscale devices near equilibrium strongly depends on the choice of the transport model. Errors larger than a factor of two can be encountered, if the drift-diffusion (DD) model is used instead of a model based on the full Boltzmann equation. This effect is due to a fundamental difference in carrier heating between bulk systems and devices. Although carrier heating is included in hydrodynamic models, this effect is captured only partially by these models due to the model inherent approximations. A direct consequence of the failure of the DD approximation is that the usual method for inversion layer mobility extraction from measurements in the linear regime becomes inaccurate for short gate lengths and the extracted mobilities might be too small. This error has also an impact on the modeling accuracy at strong nonequilibrium. In the case of the DD model, the overestimation of the conductivity in the linear regime can partly compensate the underestimation of the current at high bias, and the model accidentally appears to be more accurate than expected.
  • Keywords
    Boltzmann equation; carrier mobility; nanoelectronics; semiconductor device models; Boltzmann equations; carrier heating; drift-diffusion model; hydrodynamic models; inversion layer mobility extraction; moments-based transport models; nanoscale devices; Boltzmann equation; Current density; Electrons; Heating; High definition video; Hydrodynamics; Length measurement; Microscopy; Nanoscale devices; Particle scattering; Boltzmann equation (BE); drift-diffusion (DD); equilibrium; hydrodynamic; small-signal;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2005.857184
  • Filename
    1522676