• DocumentCode
    1203858
  • Title

    H3PO4 addition to slurry for Cu and TaN CMP

  • Author

    Kim, Sang-Yong ; Kim, Nam-Hoon ; Lim, Jong-Heun ; Chang, Eui-Goo

  • Author_Institution
    MIT CMP Team, ANAM Semicond. Inc., Kyunggi, South Korea
  • Volume
    39
  • Issue
    9
  • fYear
    2003
  • fDate
    5/1/2003 12:00:00 AM
  • Firstpage
    718
  • Lastpage
    719
  • Abstract
    Phosphoric acid (H3PO4) was evaluated as an accelerator of the tantalum nitride chemical-mechanical planarisation (CMP) process as well as a stabiliser of the hydrogen peroxide (H2O2). Also estimated were the dispersion stability and zeta potential of the abrasive with the contents of phosphoric acid. This approach may be useful for the development of the second step copper CMP slurry and hydrogen peroxide stability.
  • Keywords
    chemical mechanical polishing; copper; hydrogen compounds; metallisation; tantalum compounds; Cu; H2O2; H3PO4; TaN; abrasive slurry; chemical-mechanical planarisation; dispersion stability; hydrogen peroxide stabiliser; metallisation; phosphoric acid addition; process accelerator; zeta potential;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20030491
  • Filename
    1199949
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1203858