Title :
Further insight into the physics and modeling of floating-body capacitorless DRAMs
Author :
Villaret, Alexandre ; Ranica, Rosella ; Malinge, Pierre ; Masson, Pascal ; Martinet, Bertrand ; Mazoyer, Pascale ; Candelier, P. ; Skotnicki, Thomas
Author_Institution :
STMicroelectron., Crolles, France
Abstract :
In this paper, we report on parasitic bipolar conduction occurring in floating-body effect based capacitor-less DRAMs. A way to include these effects into a previously developed model is presented. The enhanced model is then compared with electrical data realized on triple-well nMOSFET devices within the 26°C-100°C temperature range.
Keywords :
DRAM chips; MOSFET; integrated circuit modelling; 26 to 100 C; bipolar transistors; enhanced model; floating-body capacitorless DRAM; floating-body effect; parasitic bipolar conduction; triple-well nMOSFET devices; Bipolar transistors; Diodes; Electrodes; MOS devices; MOSFET circuits; Physics; Random access memory; Semiconductor device modeling; Space charge; Temperature distribution; Bipolar transistors; DRAM; MOS devices; floating-body effect; modeling;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2005.857933
