Title :
Charge-Based Capacitance Measurement Technique for Nanoscale Devices: Accuracy Assessment Based on TCAD Simulations
Author :
Zhao, Hui ; Rustagi, Subhash C. ; Ma, Fa-Jun ; Samudra, Ganesh S. ; Singh, Navab ; Lo, G.Q. ; Kwong, Dim-Lee
Author_Institution :
Agency for Sci., Technol. & Res., Inst. of Microelectron., Singapore
fDate :
5/1/2009 12:00:00 AM
Abstract :
In this brief, we carried out extensive mixed device and circuit-mode simulations to calibrate the charge-based capacitance measurement technique specifically for subfemtofarad nanowire-based device capacitance. The factors that influence the accuracy of the technique were identified.
Keywords :
capacitance measurement; nanowires; technology CAD (electronics); TCAD simulations; charge-based capacitance measurement; circuit-mode simulations; extensive mixed device; nanoscale devices; subfemtofarad nanowire-based device capacitance; CMOS technology; Capacitance measurement; Circuit simulation; Current measurement; Laboratories; Microelectronics; Nanoscale devices; Parasitic capacitance; Pulse measurements; Silicon; Charge-based capacitance measurement (CBCM) technique; nanoscale devices; nanowire MOSFETs; sub-femtofarad capacitance measurements; transient TCAD simulations;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2009.2016396
