DocumentCode :
1203979
Title :
Charge-Based Capacitance Measurement Technique for Nanoscale Devices: Accuracy Assessment Based on TCAD Simulations
Author :
Zhao, Hui ; Rustagi, Subhash C. ; Ma, Fa-Jun ; Samudra, Ganesh S. ; Singh, Navab ; Lo, G.Q. ; Kwong, Dim-Lee
Author_Institution :
Agency for Sci., Technol. & Res., Inst. of Microelectron., Singapore
Volume :
56
Issue :
5
fYear :
2009
fDate :
5/1/2009 12:00:00 AM
Firstpage :
1157
Lastpage :
1160
Abstract :
In this brief, we carried out extensive mixed device and circuit-mode simulations to calibrate the charge-based capacitance measurement technique specifically for subfemtofarad nanowire-based device capacitance. The factors that influence the accuracy of the technique were identified.
Keywords :
capacitance measurement; nanowires; technology CAD (electronics); TCAD simulations; charge-based capacitance measurement; circuit-mode simulations; extensive mixed device; nanoscale devices; subfemtofarad nanowire-based device capacitance; CMOS technology; Capacitance measurement; Circuit simulation; Current measurement; Laboratories; Microelectronics; Nanoscale devices; Parasitic capacitance; Pulse measurements; Silicon; Charge-based capacitance measurement (CBCM) technique; nanoscale devices; nanowire MOSFETs; sub-femtofarad capacitance measurements; transient TCAD simulations;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2009.2016396
Filename :
4804779
Link To Document :
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