Title :
Reduction of current collapse in AlGaN/GaN HFETs using AlN interfacial layer
Author :
Lee, J.S. ; Kim, J.W. ; Lee, J.H. ; Kim, C.S. ; Oh, J.E. ; Shin, M.W. ; Lee, J.H.
Author_Institution :
Adv. Devices Group, LG Electron. Inst. of Technol., Seoul, South Korea
fDate :
5/1/2003 12:00:00 AM
Abstract :
Modified AlGaN/AlN/GaN HFET structures were grown and the current collapse phenomena were examined. Pulsed I-V measurements showed that the insertion of the thin AlN interfacial layer was effective in preventing the electrons in the 2DEG channel from being transferred to the surface and bulk traps in the AlGaN barrier layer.
Keywords :
III-V semiconductors; aluminium compounds; electron traps; gallium compounds; microwave field effect transistors; microwave measurement; microwave power transistors; power field effect transistors; semiconductor device measurement; two-dimensional electron gas; wide band gap semiconductors; 2DEG channel; AlGaN-AlN-GaN; AlGaN/AlN/GaN; HFETs; barrier layer; bulk traps; current collapse; high-power microwave electronics; interfacial layer; pulsed I-V measurements; surface traps;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20030473
