Title :
The effects of screening on the reliability of GaAlAs/GaAs semiconductor lasers
Author :
Chik, Dawkung K. ; Devenyi, Tibor F.
Author_Institution :
Bell-Northern Res., Ottawa, Ont., Canada
fDate :
7/1/1988 12:00:00 AM
Abstract :
The effects of a two-stage test method on the reliability assurance of GaAlAs/GaAs lasers are examined. Life-test data indicate that early failure mode can be effectively eliminated by a prelife-test screening procedure. Degradation rates obtained after removing these prematurely failured devices provide a useful parameter to predict device lifetime statistically. However, another degradation mode, developed during laser lifetime, prevents the use of this degradation rate to calculate realistic individual device lifetimes
Keywords :
aluminium compounds; gallium arsenide; production testing; reliability; semiconductor device testing; semiconductor junction lasers; GaAlAs-GaAs lasers; degradation mode; device lifetime prediction; early failure mode; effects of screening; life testing data; prelife-test screening procedure; prematurely failured devices; reliability; semiconductor lasers; two-stage test method; Acceleration; Degradation; Diode lasers; Gallium arsenide; Laser modes; Life testing; Power lasers; Semiconductor device reliability; Semiconductor lasers; Temperature;
Journal_Title :
Electron Devices, IEEE Transactions on
