The effects of screening on the reliability of GaAlAs/GaAs semiconductor lasers

Author

Chik, Dawkung K. ; Devenyi, Tibor F.

Author_Institution

Bell-Northern Res., Ottawa, Ont., Canada

Volume

35

Issue

7

fYear

1988

fDate

7/1/1988 12:00:00 AM

Firstpage

966

Lastpage

969

Abstract

The effects of a two-stage test method on the reliability assurance of GaAlAs/GaAs lasers are examined. Life-test data indicate that early failure mode can be effectively eliminated by a prelife-test screening procedure. Degradation rates obtained after removing these prematurely failured devices provide a useful parameter to predict device lifetime statistically. However, another degradation mode, developed during laser lifetime, prevents the use of this degradation rate to calculate realistic individual device lifetimes

Keywords

aluminium compounds; gallium arsenide; production testing; reliability; semiconductor device testing; semiconductor junction lasers; GaAlAs-GaAs lasers; degradation mode; device lifetime prediction; early failure mode; effects of screening; life testing data; prelife-test screening procedure; prematurely failured devices; reliability; semiconductor lasers; two-stage test method; Acceleration; Degradation; Diode lasers; Gallium arsenide; Laser modes; Life testing; Power lasers; Semiconductor device reliability; Semiconductor lasers; Temperature;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.3352

Filename

3352