I(t) technique for generation rate determination in implanted MOS structures

A technique for evaluating the generation rare profile of MOS structures based on the measurement of gate current transients at two different gate voltage waveforms in non-equilibrium nonsteady-state is presented. The method allows the evaluation of the generation rate profile in the bulk of inhomogeneously doped MOS structures without requiring knowledge of the doping profile and provides, in contrast to high frequency methods, reliable results in such cases where MOS structures with high series resistances are to be investigated