• DocumentCode
    1204541
  • Title

    0.2 μm AlSb/InAs HEMTs with 5 V gate breakdown voltage

  • Author

    Boos, J. Brad ; Kruppa, W. ; Park, DaeLim ; Shanabrook, B.V. ; Bennett, Brian R.

  • Author_Institution
    Naval Res. Lab., Washington, DC
  • Volume
    30
  • Issue
    23
  • fYear
    1994
  • fDate
    11/10/1994 12:00:00 AM
  • Firstpage
    1983
  • Lastpage
    1984
  • Abstract
    DC and microwave measurements on AlSb/InAs HEMTs with a gate length of 0.21 μm are reported. The reverse gate characteristics exhibit relatively low gate leakage current and gate-drain breakdown voltages as high as 5 V. Equivalent circuit modelling yields an fT of 110 GHz after removal of the gate bonding pad capacitance. The bias dependence of fmax is examined indicating a significant reduction in the unilateral gain due to impact ionisation
  • Keywords
    III-V semiconductors; S-parameters; aluminium compounds; electric breakdown; high electron mobility transistors; impact ionisation; indium compounds; leakage currents; microwave field effect transistors; semiconductor device models; 0.2 micron; 110 GHz; 5 V; AlSb-InAs; DC measurements; HEMT; equivalent circuit modelling; gate-drain breakdown voltages; impact ionisation; leakage current; microwave measurements; reverse gate characteristics; unilateral gain reduction;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19941316
  • Filename
    335634
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1204541